SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION.

FEATURES: -Excellent Switching Times : tr=1.0μs (Max.), tf=1.5us (Max.) at Ic=0.5A -High Collector Breakdown Voltage: VCEO=400V

文件：263.16 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

文件：171.99 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) ● Excellent linearity of DC forward current gain

文件：849.5 Kbytes 页数：3 Pages

HTSEMI

金誉半导体

LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ● Excellent linearity of DC forward gain. ● Super mini packa

文件：220.83 Kbytes 页数：5 Pages

ISAHAYA

谏早电子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：80.15 Kbytes 页数：1 Pages

JIANGSU

长电科技

NPN Transistor

Features ● Collector current :IC=0.2A ● Power dissipation :PC=0.15W

文件：41.64 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Silicon Plastic-Encapsulate Transistor

FEATURE • Excellent linearity of DC forward current gain. • Low collector to emitter saturation voltage VCE(sat)=0.3V max. (@IC=100mA, IB=10mA)

文件：352.49 Kbytes 页数：3 Pages

SECOS

喜可士

Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

文件：2.23809 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encapsulate Transistors

FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain

文件：359.7 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

NPN Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Power Dissipation of 150mW • Low collector to emitter saturation voltage • Excellent linearity of DC forward current gain MECHANICAL DATA • Case:SOT-23(TO-236) • Terminals:Plated solderable per MIL-STD-750,method 2026 • Mounting Positi

文件：1.27998 Mbytes 页数：5 Pages

JINGHENG

晶恒