TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：131.89 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features High breakdown voltage, good hFE linearity, low VCE(sat), complements the 2SD1898.  Applications General power amplifier applications.

文件：669.38 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

SOT-89 Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：362.29 Kbytes 页数：2 Pages

WILLAS

威伦电子

Plastic-Encapsulate Transistors

FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898.

文件：173.59 Kbytes 页数：2 Pages

HOTTECH

合科泰

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：66.95 Kbytes 页数：1 Pages

TEL

东电电子

POWER TRANSISTOR

POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)

文件：57.69 Kbytes 页数：4 Pages

UTC

友顺

POWER TRANSISTOR

POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)

文件：57.69 Kbytes 页数：4 Pages

UTC

友顺

POWER TRANSISTOR

POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)

文件：57.69 Kbytes 页数：4 Pages

UTC

友顺

POWER TRANSISTOR

POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)

文件：57.69 Kbytes 页数：4 Pages

UTC

友顺

POWER TRANSISTOR

POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)

文件：57.69 Kbytes 页数：4 Pages

UTC

友顺