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2SB1300

PNP SILICON TRANSISTOR

DESCRIPTION The 2SB1300 is designed for use in driver an output stages of audio frequency amplifiers.

文件:134.81 Kbytes 页数:2 Pages

NEC

瑞萨

2SB1302

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

文件:281.84 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

2SB1302

High-Current Switching Applications?

Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity. • Fast switching speed. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Applications • DC-DC converters, motor drivers, relay drivers, lam

文件:91.67 Kbytes 页数:3 Pages

SANYO

三洋

2SB1302

PNP Epitaxial Planar Silicon Transistors

■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity. ● Fast switching speed.

文件:58.55 Kbytes 页数:2 Pages

KEXIN

科信电子

2SB1302S-TD-E

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

文件:281.84 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

2SB1302T-TD-E

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

文件:281.84 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

2SB1308

PowerTransistor

FEATURES ● Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A ● Excellent DC current gain characterisitics. ● Complementary the 2SD1963.

文件:151.95 Kbytes 页数:3 Pages

BILIN

银河微电

2SB1308

TRANSISTOR

FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

文件:189.49 Kbytes 页数:1 Pages

HTSEMI

金誉半导体

2SB1308

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

文件:1.5223 Mbytes 页数:4 Pages

JIANGSU

长电科技

2SB1308

Power Transistor

■ Features ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

文件:50.99 Kbytes 页数:1 Pages

KEXIN

科信电子

晶体管资料

  • 型号:

    2SB1302

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    表面帖装型 (SMD)_开关管 (S)

  • 封装形式:

    直插封装

  • 极限工作电压:

    25V

  • 最大电流允许值:

    5A

  • 最大工作频率:

    320MHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SB1073,2SB1386,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-100

  • vtest:

    25

  • htest:

    320000000

  • atest:

    5

  • wtest:

    0

技术参数

  • Pb-free:

    Pb

  • Status:

    Active

  • Polarity:

    PNP

  • Type:

    Low VCE(sat)

  • VCE(sat) Max (V):

    0.5

  • IC Cont. (A):

    5

  • VCEO Min (V):

    20

  • VCBO (V):

    25

  • VEBO (V):

    5

  • VBE(sat) (V):

    1

  • hFE Min:

    100

  • hFE Max:

    400

  • PTM Max (W):

    1.3

  • Package Type:

    SOT-89/PCP-1

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
20+
SOT-89
120000
原装正品 可含税交易
询价
RENESAS/瑞萨
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
询价
SANYO
24+
SOT-89
7100
新进库存/原装
询价
SANYO
24+
原厂封装
700
原装现货假一罚十
询价
SANYO
25+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电
询价
SANYO/三洋
2447
SOT-89
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SANYO/三洋
23+
SOT-89
50000
全新原装正品现货,支持订货
询价
SANYO
23+
SOT89
4000
正品原装货价格低
询价
SANYO
2023+
SOT89
50000
原装现货
询价
ON
22+
TO-220-3
50000
原装正品假一罚十,代理渠道价格优
询价
更多2SB130供应商 更新时间2026-3-9 14:00:00