PNP SILICON TRANSISTOR

DESCRIPTION The 2SB1300 is designed for use in driver an output stages of audio frequency amplifiers.

文件：134.81 Kbytes 页数：2 Pages

NEC

瑞萨

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

文件：281.84 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

High-Current Switching Applications?

Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity. • Fast switching speed. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Applications • DC-DC converters, motor drivers, relay drivers, lam

文件：91.67 Kbytes 页数：3 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Transistors

■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity. ● Fast switching speed.

文件：58.55 Kbytes 页数：2 Pages

KEXIN

科信电子

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

文件：281.84 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

文件：281.84 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power Transistor (-50V, -3A)

Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963.

文件：61.48 Kbytes 页数：3 Pages

ROHM

罗姆

Power Transistor

■ Features ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

文件：50.99 Kbytes 页数：1 Pages

KEXIN

科信电子

PowerTransistor

FEATURES ● Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A ● Excellent DC current gain characterisitics. ● Complementary the 2SD1963.

文件：151.95 Kbytes 页数：3 Pages

BILIN

银河微电

TRANSISTOR

FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

文件：189.49 Kbytes 页数：1 Pages

HTSEMI

金誉半导体