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2SB1308

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

文件:1.5223 Mbytes 页数:4 Pages

JIANGSU

长电科技

2SB1308

丝印:BFP;Package:SOT-89;Power Transistor(-50V,-3A)

FEATURES Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Excellent DC current gain characterisitics. Complementary the 2SD1963.

文件:437.12 Kbytes 页数:3 Pages

DGNJDZ

南晶电子

2SB1308

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件:134.56 Kbytes 页数:1 Pages

WINNERJOIN

永而佳

2SB1308

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

文件:482.13 Kbytes 页数:3 Pages

WILLAS

威伦电子

2SB1308

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件:66.51 Kbytes 页数:1 Pages

TEL

2SB1308-P

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO

文件:227.64 Kbytes 页数:2 Pages

MCC

2SB1308-Q

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO

文件:227.64 Kbytes 页数:2 Pages

MCC

2SB1308-R

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO

文件:227.64 Kbytes 页数:2 Pages

MCC

2SB1314

FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

[Isahaya] DESCRIPTION Mitsubishi 2SB1314 is a silicon PNP epitaxial planar type power transistor using insulated full mold package.

文件:120.81 Kbytes 页数:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SB1314

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

DESCRIPTION Mitsubishi 2SB1314 is a silicon PNP epitaxial planar type power transistor using insulated full mold package. APPLICATION Power supply circuit, solenoid drive.

文件:123.49 Kbytes 页数:3 Pages

ISAHAYA

谏早电子

晶体管资料

  • 型号:

    2SB1300

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    低频或音频放大 (LF)_开关管 (S)

  • 封装形式:

    直插封装

  • 极限工作电压:

    20V

  • 最大电流允许值:

    3A

  • 最大工作频率:

    140MHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SA1296,2SB893,2SB976,2SB985,2SB1117,2SB1505,

  • 最大耗散功率:

    0.75W

  • 放大倍数:

  • 图片代号:

    A-20

  • vtest:

    20

  • htest:

    140000000

  • atest:

    3

  • wtest:

    0.75

技术参数

  • VCEO (V):

    16

  • hFE min.:

    135

  • hFE max.:

    600

  • Pc (W):

    0.75

  • Production Status:

    EOL

供应商型号品牌批号封装库存备注价格
ROHM
24+
30000
询价
NEC
2447
TO-92
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
NEC
24+
TO-92
5000
只做原装正品现货 欢迎来电查询15919825718
询价
NEC
24+
原厂封装
770
原装现货假一罚十
询价
NEC
2602+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
SOT-89
25+
NA
15659
振宏微专业只做正品,假一罚百!
询价
NEC
最新
SOT-89
35689
原装进口现货库存专业工厂研究所配单供货
询价
NEC
23+
SOT-89
16238
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
RENESAS/瑞萨
20+
SOT-89
120000
只做原装 可免费提供样品
询价
原装NEC
23+
SOT-89
5000
专注配单,只做原装进口现货
询价
更多2SB13供应商 更新时间2026-10-22 16:30:00