PNP Silicon Epitaxial Transistors

文件：579.65 Kbytes 页数：3 Pages

MCC

TO-252-2L Plastic-Encapsulate Transistors

文件：918.32 Kbytes 页数：4 Pages

JIANGSU

长电科技

Silicon PNP transistor in a TO-252 Plastic Package.

文件：866.8 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. • High hFE hFE = 100 to 400\n• Low VCE(sat) VCE(sat) ≤ 0.3 V;

Renesas

瑞萨

晶体管

JSCJ

长晶科技

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：64.03 Kbytes 页数：1 Pages

TEL

丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistors

DESCRIPTION • Low Collector Saturation Voltage • High Power Dissipation- : PC= 10W(Max)@TC=25℃ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in audio amplifier and switching, especially in hybrid integrated cir

文件：273.9 Kbytes 页数：2 Pages

ISC

无锡固电

PNP Silicon Epitaxial Transistor

■ Features ● High hFE hFE = 100 to 400 ● Low VCE(sat) VCE(sat) ≤ 0.3 V

文件：41.81 Kbytes 页数：2 Pages

KEXIN

科信电子

PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFEhFE= 100 to 400 • Low VCE(sat) VCE(sat) ≤0.3 V

文件：295.69 Kbytes 页数：6 Pages

NEC

瑞萨

丝印：IPAK；Package：TO-251；isc Silicon PNP Power Transistors

文件：271.87 Kbytes 页数：2 Pages

ISC

无锡固电