丝印：QR；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SM

文件：148.71 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：QR；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA

文件：148.71 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：QR；The 1SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage

Description The 1SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The 1SMA5.0AT3G series is supplied in the Littelfuse exclus

文件：723.05 Kbytes 页数：5 Pages

Littelfuse

力特

丝印：QR；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional

400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA

文件：131.6 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：QR；Package：ATV；Power Transistor

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763

文件：43.82 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：QR；Package：ATV；Power Transistor (-120V , -1.5A)

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763

文件：73.12 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：QR；Package：ATV；Power Transistor (-60V, -3A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. ● Structure Epitaxial planar type PNP silicon transistor

文件：147.11 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：QR；Package：SOT-23；NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V

文件：556.02 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：QR；Package：SOT-89；MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES

文件：60.08 Kbytes 页数：8 Pages

NEC

瑞萨

丝印：QR；Package：ATV；Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

文件：147 Kbytes 页数：4 Pages

ROHM

罗姆