1SMA8.0AT3G

Marking：QR；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400WattPeakPowerZenerTransientVoltageSuppressors Unidirectional* TheSMAseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSM

1SMA8.0AT3G

Marking：QR；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400WattPeakPowerZenerTransientVoltageSuppressors Unidirectional TheSMAseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMA

1SMA8.0AT3G

Marking：QR；The 1SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage

Description The1SMA5.0AT3Gseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.The1SMA5.0AT3GseriesissuppliedintheLittelfuseexclus

1SMA8.0AT3G

Marking：QR；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional

400WattPeakPowerZenerTransientVoltageSuppressors Unidirectional TheSMAseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMA

2SB1236

Marking：QR；Package：ATV；Power Transistor

PowerTransistor(-120V,-1.5A)2SB1236/2SB1186 PowerTransistor(120V,1.5A)2SC4132/2SD1857/2SD2343/2SD1763

2SB1236

Marking：QR；Package：ATV；Power Transistor (-120V , -1.5A)

PowerTransistor(-120V,-1.5A)2SB1236/2SB1186 PowerTransistor(120V,1.5A)2SC4132/2SD1857/2SD2343/2SD1763

2SB1243

Marking：QR；Package：ATV；Power Transistor (-60V, -3A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864/2SD1762. ●Structure Epitaxialplanartype PNPsilicontransistor

2SC2714-R

Marking：QR；Package：SOT-23；NPN Transistors

■Features ●CollectorCurrentCapabilityIC=20mA ●CollectorEmitterVoltageVCEO=30V

2SC4536

Marking：QR；Package：SOT-89；MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The2SC4536isdesignedforuseinmiddlepower,lowdistortionlownoisefigureRFamplifier.Itfeaturesexcellentlinearityandlargedynamicrange,whichmakeitsuitableforCATV,telecommunication,andotheruse,itemploysplasticsurfacemounttypepackage(SOT-89). FEATURES

2SD1864

Marking：QR；Package：ATV；Power Transistor (50V, 3A)

PowerTransistor(50V,3A) Features 1)LowVCE(sat), VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe 2SB1184/2SB1243/2SB1185.
Structure EpitaxialplanartypeNPNsilicontransistor