Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High breakdown voltage • Low collector saturation voltage • Complement to type 2SD1407 APPLICATIONS • Power amplifier applications

文件：161.73 Kbytes 页数：4 Pages

SAVANTIC

PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT ● Complement to 2SD1407

文件：69.96 Kbytes 页数：1 Pages

WINGS

永盛电子

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max) • Complementary to 2SD1407A

文件：148.33 Kbytes 页数：2 Pages

TOSHIBA

东芝

PNP SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES ​​​​​​​* Low base drive

文件：69.26 Kbytes 页数：2 Pages

UTC

友顺

2SB1017

Silicon PNP Power Transistors

文件：33.64 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1408 APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage

文件：182.66 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1408 APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage

文件：214.16 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A • Good Linearity of hFE • Complement to Type 2SD1408 APPLICATIONS • Designed for power amplifier applications. • Recommended for 20~25W high-fidelity audio frequency amplifier output stage.

文件：127.69 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1408 APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage

文件：158.81 Kbytes 页数：4 Pages

SAVANTIC

PNP SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES ​​​​​​​* Low base drive

文件：69.26 Kbytes 页数：2 Pages

UTC

友顺