Silicon PNP epitaxial planer type(For low-frequency amplification)

■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping.

文件：38.11 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP epitaxial planer type(For low-frequency amplification)

■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping.

文件：38.11 Kbytes 页数：2 Pages

PANASONIC

松下

SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING

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文件：320.95 Kbytes 页数：2 Pages

HITACHIHitachi Semiconductor

日立日立公司

Complement to Type 2SD1435

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -8A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Complement to Type 2SD1435 APPLICATIONS • Designed for low frequency power amplifier applications.

文件：88.63 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -8A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Complement to Type 2SD1435 APPLICATIONS • Designed for low frequency power amplifier applications.

文件：137.59 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K

SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K

文件：451.49 Kbytes 页数：2 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon PNP Triple Diffused

Power switching complementary pair with 2SD1436(K)

文件：36.6 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon PNP Triple Diffused

Power switching complementary pair with 2SD1436(K)

文件：36.6 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SD1437 APPLICATIONS • For low frequency power amplifier applications

文件：136.34 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) • Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@lc= -2A • Complement to Type 2SD1437 APPLICATIONS • Designed for low frequency power amplifier applications.

文件：128.12 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司