Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High breakdown voltage • Low collector saturation voltage • Complement to type 2SD1407 APPLICATIONS • Power amplifier applications

文件：187.67 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(satr -2.0V(Max)@lc= -4A • Good Linearity of hFE • Complement to Type 2SD1407 APPLICATIONS • Designed for audio frequency power amplifier applications.

文件：125.62 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High breakdown voltage • Low collector saturation voltage • Complement to type 2SD1407 APPLICATIONS • Power amplifier applications

文件：161.73 Kbytes 页数：4 Pages

SAVANTIC

PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT ● Complement to 2SD1407

文件：69.96 Kbytes 页数：1 Pages

WINGS

永盛电子

Silicon PNP Power Transistors

文件：163.44 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Power Transistors

文件：218.74 Kbytes 页数：4 Pages

JMNIC

锦美电子

PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

Wing Shing Computer

永盛电子

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max) • Complementary to 2SD1407A

文件：148.33 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

文件：218.74 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件：218.74 Kbytes 页数：4 Pages

JMNIC

锦美电子