PNP SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES ​​​​​​​* Low base drive

文件：69.26 Kbytes 页数：2 Pages

UTC

友顺

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • High collector current • Low collector saturation voltage • Complement to type 2SD1411 APPLICATIONS • Power amplifier applications • High current switching applications

文件：181.01 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low saturation voltage • Complement to type 2SD1411 APPLICATIONS • High current switching applications • Power amplifier applications

文件：214.11 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low saturation voltage • Complement to type 2SD1411 APPLICATIONS • High current switching applications • Power amplifier applications

文件：133.72 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • High collector current • Low collector saturation voltage • Complement to type 2SD1411A APPLICATIONS • Power amplifier applications • High current switching applications

文件：265.45 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage-: VCE(sat)= -0.5V(Max)@IC= -4A • High Current Capability- IC= -7A • Complement to Type 2SD1411A APPLICATIONS • High current switching applications. • Power amplifier applications.

文件：127.07 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage-: VCE(sat)= -0.5V(Max)@IC= -4A • High Current Capability- IC= -7A • Complement to Type 2SD1411A APPLICATIONS • High current switching applications. • Power amplifier applications.

文件：245.87 Kbytes 页数：2 Pages

ISC

无锡固电

TRANSISTOR (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)

High Current Switching Applications Power Amplifier Applications • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A) • Complementary to 2SD1411A

文件：199.54 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications

文件：132.07 Kbytes 页数：3 Pages

ISC

无锡固电

2SB1019

Silicon PNP Power Transistors

文件：45.04 Kbytes 页数：1 Pages

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