Silicon PNP triple diffusion planar type

Silicon PNP triple diffusion planar type For low-frequency output amplification ■ Features • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat)

文件：87.25 Kbytes 页数：4 Pages

PANASONIC

松下

Silicon PNP Epitaxial

Application Low frequency power amplifier complementary pair with 2SD1376(K)

文件：33.52 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon PNP Epitaxial

Application Low frequency power amplifier complementary pair with 2SD1376(K)

文件：33.52 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Low collector saturation voltage: VCE (sat)= −1.7 V (max) (IC= −3 A, IB= −0.3 A) • Collector power dissipation: PC= 25 W (Tc = 25°C)

文件：148.63 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications

文件：178.64 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25
·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications

文件：210.08 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications

文件：162.83 Kbytes 页数：4 Pages

SAVANTIC

TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Low collector saturation voltage: VCE (sat)= −1.7 V (max) (IC= −3 A, IB= −0.3 A) • Collector power dissipation: PC= 25 W (Tc = 25°C)

文件：148.63 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High breakdown voltage • Low collector saturation voltage • Complement to type 2SD1407 APPLICATIONS • Power amplifier applications

文件：187.67 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(satr -2.0V(Max)@lc= -4A • Good Linearity of hFE • Complement to Type 2SD1407 APPLICATIONS • Designed for audio frequency power amplifier applications.

文件：125.62 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司