丝印：HFE；SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50

文件：333.78 Kbytes 页数：6 Pages

RENESAS

瑞萨

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

文件：211.78 Kbytes 页数：3 Pages

WEITRON

丝印：M4；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier.

文件：253.17 Kbytes 页数：4 Pages

BILIN

银河微电

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency amplifier applications.

文件：228.57 Kbytes 页数：1 Pages

DCCOM

道全

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Complementary pair with 2SC1623. Applications Audio frequency amplifier application.

文件：626.96 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：M6；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES • Commplementary to 2SC1623. • High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) • High Voltage: VCEO=-50V. APPLICATIONS • Audio frequency, general purpose amplifier.

文件：2.3639 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encap sulate Transistors

FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V

文件：526.31 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：M4；Package：SOT-23；PNP Silicon Epitaxial Transistor

Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V

文件：443.2 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V

文件：306.61 Kbytes 页数：2 Pages

HOTTECH

合科泰

Plastic-Encapsulate Transistors

Features: 1. hFE is high, hFE=200(TYP) VCE=-6V, IC=-1mA; 2. High voltage, VCEO=-50V; Applications: For general amplification, it is complementary to 2SC1623.

文件：723.93 Kbytes 页数：2 Pages

SHENZHENSLS

三联盛