PNP SILICON TRANSISTOR

2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications.

文件：73.45 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.4Watts of Power Dissipation. • Collector-current: -0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +125°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:A1015 • Lead Free Finish/R

文件：84.67 Kbytes 页数：2 Pages

MCC

丝印：BA；Package：SOT-23；PNP Transistors

Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz

文件：452.4 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic Encapsulate Transistors

FEATURES . Power Dissipation PCM: 0.2 W ( Ta = 25 к) . Collector Current ICM: -0.15 A . Collector-Base Voltage V(BR)CBO: -50 V

文件：256.589 Kbytes 页数：2 Pages

SECOS

喜可士

TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Audio Frequency Amplifier Applications Low Noise Amplifier Applications • High voltage and high current: VCEO= −50 V (min), IC= −150 mA (max) • Excellent hFElinearity: hFE(2) = 80 (typ.) at VCE= −6 V, IC= −150 mA

文件：153.07 Kbytes 页数：2 Pages

TOSHIBA

东芝

丝印：BAL；Package：SOT-23；PNP Transistors

Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz

文件：452.4 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

文件：172.91 Kbytes 页数：3 Pages

TOSHIBA

东芝

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.4Watts of Power Dissipation. • Collector-current: -0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +125°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:A1015 • Lead Free Finish/R

文件：84.67 Kbytes 页数：2 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.4Watts of Power Dissipation. • Collector-current: -0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +125°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:A1015 • Lead Free Finish/R

文件：84.67 Kbytes 页数：2 Pages

MCC

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

文件：196.1 Kbytes 页数：3 Pages

TOSHIBA

东芝