PNP Epitaxial Silicon Transistor

Features • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage -160V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets

文件：108.35 Kbytes 页数：2 Pages

MCC

丝印：BA；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Complementary To 2SC1815. ● Excellent HFE Linearity. ● High voltage and high current. ● Low noise. ● Collector-Emitter voltage BVCEO=-50V. APPLICATIONS ● Low frequency , low noise amplifier.

文件：205.91 Kbytes 页数：4 Pages

BILIN

银河微电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) ● Power dissipation

文件：2.58913 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815. Applications Audio frequency general purpose, driver stage amplifier applications.

文件：1.22139 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor C1815 is recommended.

文件：2.0101 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

PNP Transistors

Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz

文件：452.4 Kbytes 页数：3 Pages

YFWDIODE

佑风微

PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

文件：156 Kbytes 页数：2 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

文件：172.91 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

文件：196.1 Kbytes 页数：3 Pages

TOSHIBA

东芝

PNP Epitaxial Planar Transistor

PNP Epitaxial Planar Transistor

文件：128.06 Kbytes 页数：2 Pages

FCI

富加宜