TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

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DCCOM

道全

isc Silicon PNP Transistor

DESCRIPTION • High Voltage and High Current Vceo=-50V(Min.), Ic=-150mA(Max) • Excellent hFE Linearity • Low Noise • Complement to Type 2SC1815 APPLICATIONS • Audio frequency general purpose amplifier Applications • Driver stage amplifier applications.

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ISC

无锡固电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power dissipation

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JIANGSU

长电科技

PNP Transistor

Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz

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KEXIN

科信电子

PNP SILICON TRANSISTOR

2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications.

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MICRO-ELECTRONICS

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended.)

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SEMTECH_ELEC

先之科半导体

PNP EPITAXIAL PLANAR TRANSISTOR

Description The 2SA1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

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TGS

丝印：BA；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Complementary To 2SC1815. ● Excellent HFE Linearity. ● High voltage and high current. ● Low noise. ● Collector-Emitter voltage BVCEO=-50V. APPLICATIONS ● Low frequency , low noise amplifier.

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LUGUANG

鲁光电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● Power dissipation

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KOOCHIN

灏展电子

High voltage and high current

FEATURES High voltage and high current Excellent hFE Linearity Low niose ,Complementary to C1815

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MAKOSEMI

美科半导体