丝印：BAL；Package：SOT-23；PNP Transistors

Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz

文件：452.4 Kbytes 页数：3 Pages

YFWDIODE

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PNP Transistors

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KEXIN

科信电子

PNP Transistors

文件：926.75 Kbytes 页数：2 Pages

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Silicon PNP transistor in a SOT-23 Plastic Package

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FOSHAN

蓝箭电子

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.4Watts of Power Dissipation. • Collector-current: -0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +125°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:A1015 • Lead Free Finish/R

文件：84.67 Kbytes 页数：2 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

文件：390.75 Kbytes 页数：3 Pages

MCC