PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.4Watts of Power Dissipation. • Collector-current: -0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +125°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:A1015 • Lead Free Finish/R

文件：84.67 Kbytes 页数：2 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

文件：390.75 Kbytes 页数：3 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

文件：633.47 Kbytes 页数：3 Pages

MCC

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

文件：196.1 Kbytes 页数：3 Pages

TOSHIBA

东芝

中等功率双极型晶体管

MCC

美微科

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A TO92

Micro Commercial Co

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A TO92

Micro Commercial Co