丝印：6C；Package：SOT-323；We declare that the material of product compliance with RoHS requirements and Halogen Free.

FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● ESD Protected:1000V

文件：1.33572 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON)

文件：295.95 Kbytes 页数：7 Pages

NCEPOWER

新洁能

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

文件：161.6 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：K72；Package：SOT-23；N-Ch Small Signal MOSFET with ESD Protection

FEATURES • RDS(ON), VGS@10V, IDS@500mA=3Ω • RDS(ON), VGS@4.5V, IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Driver

文件：533.11 Kbytes 页数：4 Pages

SECOS

喜可士

Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON)

文件：300.32 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot

文件：164.63 Kbytes 页数：3 Pages

UTC

友顺

N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：74.38 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

丝印：C7K；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed

文件：127.12 Kbytes 页数：4 Pages

DIODES

美台半导体

N-Channel MOSFET

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • ESD Protected up to 2KV (HBM) • Marking : 72K • Halogen free available upon request by adding suff

文件：392.24 Kbytes 页数：7 Pages

MCC

N-Channel Enhanceent Mode Field Effect Transistor

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage

文件：41.11 Kbytes 页数：1 Pages

KEXIN

科信电子