丝印：7K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant • ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD2

文件：224.26 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：704；Package：SOT-23；Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件：106.85 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：7K***；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件：233.86 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFET

文件：64.519 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFET

文件：68.91 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFET

文件：64.519 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT MODE

文件：361.62 Kbytes 页数：5 Pages

UTC

友顺

N-Channel Enhancement Mode FET

文件：140.21 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

Small Signal MOSFET 200 mAmps, 60 Volts N?묬hannel TO??2 200 mAMPS 60 VOLTS

文件：57.66 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

COLOUR TELEVISION

文件：6.0518 Mbytes 页数：70 Pages

TOSHIBA

东芝