丝印：7002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.115A RDS(ON)

文件：529.58 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：7002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.115A RDS(ON)

文件：531.93 Kbytes 页数：7 Pages

RECTRON

丽正国际

Logic N-Channel MOSFET

General Description This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. Features ■ RDS(on) (Max 7.5Ω )@VGS=10V RDS(on) (Max 7.5Ω )@VGS=4.5V ■ Gate Charge (Typical

文件：699.21 Kbytes 页数：6 Pages

SEMIWELL

矽门微

Small Signal MOSFET N-Channel

Features: *Low On-Resistance : 3 *Low Input Capacitance: 25PF *Low Out put Capacitance : 6PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 7.5ns

文件：473.01 Kbytes 页数：4 Pages

WEITRON

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage

文件：63.29 Kbytes 页数：3 Pages

DIODES

美台半导体

60 V, 300 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology Features and benefits ● Suitable for logic level gate drive sources ● Very fast switching ● Surface-mounted package ● Trench MOSFET technology Applications ● Log

文件：159.74 Kbytes 页数：13 Pages

恩XP

丝印：7002A；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：603.85 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Cha

文件：154.02 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：WB；Package：SOT-23；N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：561.25 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Cha

文件：154.02 Kbytes 页数：4 Pages

DIODES

美台半导体