丝印：3P；Package：SOT-23；Small Signal MOSFET Transistor

Small Signal MOSFET Transistor FEATURES ● High Density Cell Design For Low RDS(ON)。 ● Voltage Controlled Small Switch. ● Rugged and Reliable. ● High Saturation Current Capability. APPLICATIONS ● N-channel enhancement mode effect transistor. ● Switching application.

文件：226.69 Kbytes 页数：4 Pages

BILIN

银河微电

N-CHANNEL TRANSISTOR

Description The MTN7002N2 is a N-channel enhancement-mode MOS transistor. Drain-Sourse Voltage BVDSS 60 V Drain-Gate Voltage (RGS=1M:) BVDSS 60 V Gate-Source Voltage VGS +/-40 V Continuous Drain Current (Ta=25℃) ID 200 *1 mA Continuous Drain Current (Ta=100℃) ID 115 *1 mA Pulsed Drain Curre

文件：88 Kbytes 页数：3 Pages

COMCHIP

典琦

TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET

Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

文件：228.66 Kbytes 页数：1 Pages

DCCOM

道全

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Voltage - 60 Volts Drain Curreent - 115 mAmps FEATURES ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected :1000V MECHANICAL DATA ● Case: SOT-23, Molded Plastic ● Case Material - UL Flammabili

文件：1.37434 Mbytes 页数：3 Pages

DIOTECH

MOSFET (N-Channel)

MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.5438 Mbytes 页数：5 Pages

JIANGSU

长电科技

N-Channel MOSFET

Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability Drain-Source voltage VDS 60 V Drain Current ID 115 mA Power Dissipation PD 225 mW

文件：43.36 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：F2；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：1.20175 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 60V,ID = 0.115A RDS(ON)

文件：307.25 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：S72；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

文件：91.04 Kbytes 页数：6 Pages

PANJIT

強茂

Small Signal MOSFET

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23

文件：124.95 Kbytes 页数：5 Pages

SECOS

喜可士