N-CHANNEL MOSFET

PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

文件：245.04 Kbytes 页数：3 Pages

SSC

Silicon Standard Corp.

丝印：S72；Package：SOT-23；N Channel Small Signal MOSFET

● DRIVES SWITCHS, RELAYS, SOLENOIDS, LAMPS, DISPLAYS, ETC. ● LOW OFFSET VOLTAGE ● LOW VOLTAGE OPERATION ● EASILY DRIVEN WITHOUT BUFFER

文件：172.91 Kbytes 页数：2 Pages

STANSON

司坦森

丝印：702*；Package：SOT-23；N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

文件：30.9 Kbytes 页数：4 Pages

SUTEX

丝印：7002；Package：SOT-23；MOSFET

FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：1.24227 Mbytes 页数：5 Pages

SY

顺烨电子

丝印：702；Package：SOT-23；SMD Signal DMOS Transistor (N-Channel)

Features • Voltage Controlled Small Signal Switch • High Density Cell Design for Low RDS(ON) • Rugged and Reliable • High Saturation Current Capablity • RoHS Compliance

文件：245.32 Kbytes 页数：7 Pages

TAITRON

丝印：7002；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：619.61 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

Mosfet (N-Channel)

Features ◇ High density cell design for low RDS(ON) ◇ Voltage controlled small signal switch ◇ Rugged and reliable ◇ High saturation current capability

文件：825.43 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：383.82 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Small Signal MOSFET Transistor

FEATURES ● High Density Cell Design For Low RDS(ON)。 ● Voltage Controlled Small Switch. ● Rugged and Reliable. ● High Saturation Current Capability. APPLICATIONS ● N-channel enhancement mode effect transistor. ● Switching application.

文件：253.32 Kbytes 页数：4 Pages

MAKOSEMI

美科半导体

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. Applications Intended for use in general purpose switching and phase control applications.

文件：901.72 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子