| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
60V N-Channel Enhancement Mode MOSFET DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
N-Channel Enhancement Mode Field Effect Transistor Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
OptiMOS??Small-Signal-Transistor Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Small Signal MOSFET SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–363 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
115 mAmps,60 Volts N–ChannelSOT-363 •WedeclarethatthematerialofproductareHalogenFreeand compliancewithRoHSrequirements. •ESDProtected:1000V •Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH | WILLASWILLAS electronics corp 威倫威倫电子股份有限公司 | WILLAS | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLeadFree/RoHSCompliantVersion(Note2) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
OptiMOS??Small-Signal-Transistor Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Dual N-Channel MOSFET Features •HighDensityCellDesignForLowRDS(ON) •VoltageControlledSmallSignalSwitch •EpoxyMeetsUL94V-0FlammabilityRating •MoistureSensitivityLevel1 •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS C | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Ge-PNP
- 性质：
调幅 （AM）_调频 （FM）
- 封装形式：
直插封装
- 极限工作电压：
25V
- 最大电流允许值：
0.05A
- 最大工作频率：
800MHZ
- 引脚数：
4
- 可代换的型号：
AF106,AF109R,AF139,AF239(S),AF306,2N3283,2N3284,2N3285,2N3286,
- 最大耗散功率：
0.075W
- 放大倍数：
- 图片代号：
D-13
- vtest：
25
- htest：
800000000
- atest：
.05
- wtest：
.075
详细参数
- 型号：
2N70
- 制造商：
UTC-IC
- 制造商全称：
UTC-IC
- 功能描述：
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2410+ |
TO-220 |
15200 |
原装正品.假一赔百.正规渠道.原厂追溯. |
询价 | ||
FSC |
22+23+ |
TO-220 |
25565 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
2020+ |
TO252 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
U |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
UTC/友顺 |
2022+ |
TO-220F |
7500 |
原厂代理 终端免费提供样品 |
询价 | ||
TH/韩国太虹 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
Rongtai(容泰半导体) |
1年内 |
TO-220C |
414 |
容泰经销商 共奕芯城一站式电子元器采购平台支持自助 |
询价 | ||
UTC/友顺 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
UTC/友顺 |
20+ |
TO-220F |
7500 |
现货很近!原厂很远!只做原装 |
询价 |
