2 Amps, 700 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, P

文件：258.209 Kbytes 页数：6 Pages

UTC

友顺

2 Amps, 700 Volts N-CHANNEL POWER MOSFET

The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls • RDS(ON) = 6.3Ω@VGS = 10V \n• Ultra Low gate charge (typical 8.1nC) \n• Low reverse transfer capacitance (CRSS = typical 5.0 pF) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

UTC

友顺

N-Channel Enhancement Mode Field Effect Transistor

Features High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

文件：100.13 Kbytes 页数：7 Pages

SYC

丝印：2N7000021；Package：TO-92；N-Channel Enhancement Mode Power MOSFET

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter

文件：150.26 Kbytes 页数：2 Pages

SECELECTRONICS

上优电子

Logic N-Channel MOSFET

General Description This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. Features ■ RDS(on) (Max 5 Ω )@VGS=10V RDS(on) (Max 5.3Ω )@VGS=4.5V ■ Gate Charge (Typical

文件：717.56 Kbytes 页数：6 Pages

SEMIWELL

矽门微

Small Signal MOSFET N-Channel

Features: * Low On-Resistance : 5 Ω * Low Input Capacitance: 60PF * Low Out put Capacitance : 25PF * Low Threshole :1.4V(TYE) * Fast Switching Speed : 10ns

文件：173.9 Kbytes 页数：4 Pages

WEITRON

TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET

Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

文件：216.4 Kbytes 页数：1 Pages

DCCOM

道全

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-92 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power management

文件：312.4 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET (N-Channel)

MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：849.24 Kbytes 页数：5 Pages

JIANGSU

长电科技

丝印：702；Package：SOT-23；N-Channel Enhancement Mode MOSFET

■ Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：74.34 Kbytes 页数：1 Pages

KEXIN

科信电子