POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

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MOSPEC

统懋

Power Transistors

Power Transistors

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ETCList of Unclassifed Manufacturers

未分类制造商

Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

文件：128.21 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

文件：128.21 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

DARLINGTON SILICON POWER TRANSISTORS

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

文件：167.01 Kbytes 页数：3 Pages

BOCA

博卡

NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

文件：92.64 Kbytes 页数：4 Pages

CDIL

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

文件：71.78 Kbytes 页数：1 Pages

CENTRAL

NPN Darlington Power Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:2N6388

文件：530.51 Kbytes 页数：4 Pages

MCC

DARLINGTON NPN SILICON POWER TRANSISTORS

Plastic Medium-Power Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features • High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387

文件：164.24 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

文件：128.21 Kbytes 页数：6 Pages

ONSEMI

安森美半导体