Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

文件：128.21 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Plastic Medium?뭁ower Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ??80 VOLTS

文件：79.72 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Plastic Medium-Power Silicon Transistors

文件：113.64 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-220-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 60V 10A TO220

ONSEMI

安森美半导体