Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

文件：128.21 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SCRs 12 AMPERES RMS 50 thru 800 VOLTS

SCRs 12 AMPERES RMS 50 thru 800 VOLTS

文件：112.19 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

CASE TO-220AB

SILICON CONTROLLED RECTIFIER

文件：153.96 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Controlled Rectifiers

Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features • Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistan

文件：79.07 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SILICON CONTROLLED RECTIFIER

SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

文件：319.18 Kbytes 页数：5 Pages

DIGITRON

Silicon Controlled Rectifiers

Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features • Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistan

文件：79.07 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SCRs 12 AMPERES RMS 50 thru 800 VOLTS

SCRs 12 AMPERES RMS 50 thru 800 VOLTS

文件：112.19 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon NPN Power Transistors

文件：117.6 Kbytes 页数：3 Pages

SAVANTIC

PNP DARLINGTON POWER SILICON TRANSISTOR

文件：64.25 Kbytes 页数：2 Pages

MICROSEMI

美高森美

NPN DARLINGTON POWER

文件：133.7 Kbytes 页数：3 Pages

MICROSEMI

美高森美