首页 >2N59>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

2N5956

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area • Complement to type 2N6372/6373/6374 APPLICATIONS • Designed for driver circuits,switching and amplifier applications

文件:123.55 Kbytes 页数:3 Pages

SAVANTIC

2N5961

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

文件:295.11 Kbytes 页数:7 Pages

FAIRCHILD

仙童半导体

2N5961

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5961 Series types are Epoxy Molded Silicon NPN Transistors manufactured by the epitaxial Planar Process designed for applications requiring extremely high gain (hFE) and low noise.

文件:62.68 Kbytes 页数:1 Pages

CENTRAL

2N5962

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

文件:41.75 Kbytes 页数:2 Pages

FAIRCHILD

仙童半导体

2N5962

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5961 Series types are Epoxy Molded Silicon NPN Transistors manufactured by the epitaxial Planar Process designed for applications requiring extremely high gain (hFE) and low noise.

文件:62.68 Kbytes 页数:1 Pages

CENTRAL

2N5963

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5961 Series types are Epoxy Molded Silicon NPN Transistors manufactured by the epitaxial Planar Process designed for applications requiring extremely high gain (hFE) and low noise.

文件:62.68 Kbytes 页数:1 Pages

CENTRAL

2N5970

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High power dissipations APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

文件:130.22 Kbytes 页数:3 Pages

ISC

无锡固电

2N5970

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low-collector emitter saturation voltage APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

文件:106.11 Kbytes 页数:3 Pages

JMNIC

锦美电子

2N5970

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High power dissipations APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

文件:110.59 Kbytes 页数:3 Pages

SAVANTIC

2N5971

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 5A • Excellent Safe Operating Area APPLICATIONS • Designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

文件:128.889 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

晶体管资料

  • 型号:

    2N5944

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    超高频/特高频 (UHF)_TR_输出极 (E)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    36V

  • 最大电流允许值:

    0.4A

  • 最大工作频率:

    470MHZ

  • 引脚数:

    4

  • 可代换的型号:

    BLW42,BLW79,BLW92,BLX92,3DA32A,

  • 最大耗散功率:

    2W

  • 放大倍数:

  • 图片代号:

    G-127

  • vtest:

    36

  • htest:

    470000000

  • atest:

    0.4

  • wtest:

    2

技术参数

  • Maximum DC Collector Current:

    4A

  • Maximum Collector Emitter Voltage:

    16V

供应商型号品牌批号封装库存备注价格
MOTOROLA/摩托罗拉
2019+
SMD
6992
原厂渠道 可含税出货
询价
MOTOROLA/摩托罗拉
23+
1688
房间现货库存:QQ:373621633
询价
MOT
23+
高频管
1520
专营高频管模块,全新原装!
询价
MOTOROLA/摩托罗拉
24+
274
现货供应
询价
ASI
23+
TO-59
8510
原装正品代理渠道价格优势
询价
MOTOROLA/摩托罗拉
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
MOTOROLA/摩托罗拉
24+
22055
郑重承诺只做原装进口现货
询价
MOT
24+
SMD
1
询价
Freescale
25+
SMD
2789
全新原装自家现货!价格优势
询价
MOT
25+
2
公司优势库存 热卖中!
询价
更多2N59供应商 更新时间2026-3-10 16:04:00