PNP General Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

文件：154.16 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. • Low Collector Output Capacita

文件：204.29 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. • Low Collector Output Capacitance : Cob=4.5pF

文件：96.94 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

General Purpose transistor

Features - PNP silicon epitaxial planar transistor for switching and amplifier application. - As complementary type, the NPN transistor 2N3904-G is recommended. - This transistor is available in the SOT-23 case with the type designation MMBT3906-G.

文件：85.07 Kbytes 页数：3 Pages

COMCHIP

典琦

丝印：2N3906；Package：TO-92；General Purpose Transistor

Features - PNP silicon epitaxial planar transistor for switching and amplifier applications.

文件：470.75 Kbytes 页数：4 Pages

COMCHIP

典琦

PNP Silicon Transistor

Descriptions • General small signal application • Switching application Features • Low collector-emitter saturation voltage : 0.4V (Max.) @ IC=-50mA, IB=-5mA • Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz • Complementary pair with 2N3904N

文件：176.78 Kbytes 页数：3 Pages

AUK

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. • Low Collector Output Capacita

文件：195.69 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

丝印：Q2A；Package：SOT-23；General Purpose Transistors PNP Silicon

1. FEATURES • Silicon PNP transistor in a SOT-23 Plastic Package • High DC Current Gain, Low Collector to Emitter Saturation Voltage, Qualified to AEC-Q101 Standards for High Reliability, HF Product. • General purpose amplifier and switching, Meet the stringent requirements of automotive appli

文件：473.89 Kbytes 页数：4 Pages

FS

丝印：2A；Package：SOT-23；General Purpose Transistors PNP Silicon

1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

文件：474.61 Kbytes 页数：5 Pages

FS

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. • Complementary to 2N3904SC.

文件：707.9 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司