EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. • Low Collector Output Capacita

文件：195.69 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

文件：57.13 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

SOT-23 PACKAGE

文件：63.41 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

isc Silicon PNP Power Transistor

文件：296.08 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：2A；Package：SOT-23；General Purpose Transistors

文件：205.24 Kbytes 页数：6 Pages

FS

丝印：Q2A；Package：SOT-23；General Purpose Transistors PNP Silicon

1. FEATURES • Silicon PNP transistor in a SOT-23 Plastic Package • High DC Current Gain, Low Collector to Emitter Saturation Voltage, Qualified to AEC-Q101 Standards for High Reliability, HF Product. • General purpose amplifier and switching, Meet the stringent requirements of automotive appli

文件：473.89 Kbytes 页数：4 Pages

FS

丝印：2A；Package：SOT-23；General Purpose Transistors PNP Silicon

1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

文件：474.61 Kbytes 页数：5 Pages

FS

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. • Complementary to 2N3904SC.

文件：707.9 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

SOT-23 PACKAGE

文件：63.41 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

文件：57.13 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)