15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 2N3055 (NPN) MJ2955(PNP) designed for general–purpose switching and amplifier applications. 1. DC Current Gain — hFE= 20 – 70 @ IC= 4 Adc 2. Collector–Emitter Saturation Voltage — VCE(sat)= 1.1 Vdc (Max) @ IC= 4 Adc

文件：130.46 Kbytes 页数：4 Pages

Motorola

摩托罗拉

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

文件：235.85 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Transistor NPN, TO-3

Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications

文件：404.66 Kbytes 页数：4 Pages

MULTICOMP

易络盟

POWER LINEAR AND SWITCHING APPLICATIONS

The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. Designed for general purpose, moderate speed, switching and amplifier applications Compliance to RoHS.

文件：146.73 Kbytes 页数：2 Pages

COMSET

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

文件：234.04 Kbytes 页数：1 Pages

DCCOM

道全

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

文件：40.46 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage -VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplif

文件：242.87 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage -VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier

文件：151.46 Kbytes 页数：4 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device. VCEO = 100V IC = 15A

文件：14.39 Kbytes 页数：1 Pages

SEME-LAB