Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

文件：81.17 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

NPN POWER SILICON TRANSISTOR

文件：57.52 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

文件：71.17 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 115 WATTS

文件：174.38 Kbytes 页数：3 Pages

BOCA

博卡

SILICON PLANAR POWER TRANSISTORS

General Purpose Switching and Amplifier Applications 2N3055 NPN MJ2955 PNP

文件：336.47 Kbytes 页数：4 Pages

CDIL

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications.

文件：493.29 Kbytes 页数：2 Pages

CENTRAL

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 2N3055 (NPN) MJ2955(PNP) designed for general–purpose switching and amplifier applications. 1. DC Current Gain — hFE= 20 – 70 @ IC= 4 Adc 2. Collector–Emitter Saturation Voltage — VCE(sat)= 1.1 Vdc (Max) @ IC= 4 Adc

文件：130.46 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

文件：235.85 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Transistor NPN, TO-3

Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications

文件：404.66 Kbytes 页数：4 Pages

MULTICOMP

易络盟

POWER LINEAR AND SWITCHING APPLICATIONS

The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. Designed for general purpose, moderate speed, switching and amplifier applications Compliance to RoHS.

文件：146.73 Kbytes 页数：2 Pages

COMSET