TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

文件：234.04 Kbytes 页数：1 Pages

DCCOM

道全

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

文件：40.46 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage -VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplif

文件：242.87 Kbytes 页数：4 Pages

JMNIC

锦美电子

NPN SILICON PHOTO TRANSISTOR

NPN SILICON POWER TRANSISTOR

文件：124.46 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage -VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier

文件：151.46 Kbytes 页数：4 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device. VCEO = 100V IC = 15A

文件：14.39 Kbytes 页数：1 Pages

SEME-LAB

NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES

NPN Transistor for Powerful AF Output Stage 2 N 3055 is a single diffused NPN silicon transistor in TO 3 case (3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for use in powerful AF output stages and in stabilized power supply units.

文件：83.79 Kbytes 页数：4 Pages

SIEMENS

西门子

Silicon NPN Power Transistor

DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 APPLICATIONS ·Designed for general-purpose switching and amplifier applications

文件：146.26 Kbytes 页数：3 Pages

TGS

Silicon NPN Power Transistor

DESCRIPTION ◇Excellent Safe Operating Area ◇DC Current Gain-hFE=20-70@IC = 4A ◇Collector-Emitter Saturation Voltage-: VCE(sat)= 1.1 V(Max)@ IC = 4A ◇Complement to Type 2N2955 APPLICATIONS ◇Designed for general-purpose switching and amplifierapplications

文件：872.36 Kbytes 页数：2 Pages

LUGUANG

鲁光电子