160 V half bridge SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Integrated shoot-through protection with built-in dead time  Integrated sho

文件：572.95 Kbytes 页数：24 Pages

Infineon

英飞凌

160 V half bridge SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Integrated shoot-through protection with built-in dead time  Integrated sho

文件：579.31 Kbytes 页数：23 Pages

Infineon

英飞凌

160 V half bridge SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Integrated shoot-through protection with built-in dead time  Integrated sho

文件：579.34 Kbytes 页数：23 Pages

Infineon

英飞凌

160 V half bridge SOI gate driver with integrated bootstrap diode

Features • Bootstrap voltage (VB node) of +160 V • Floating channel designed for bootstrap operation • Integrated low RON, ultra-fast bootstrap diodes • Independent under voltage lockout for both high and low side • Integrated shoot-through protection with built-in dead time • Integrated sho

文件：560.9 Kbytes 页数：23 Pages

Infineon

英飞凌

160 V half bridge SOI gate driver with integrated bootstrap diode

Features • Bootstrap voltage (VB node) of +160 V • Floating channel designed for bootstrap operation • Integrated low RON, ultra-fast bootstrap diodes • Independent under voltage lockout for both high and low side • Integrated shoot-through protection with built-in dead time • Integrated sho

文件：561.7 Kbytes 页数：24 Pages

Infineon

英飞凌

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：549.18 Kbytes 页数：22 Pages

Infineon

英飞凌

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：550.22 Kbytes 页数：22 Pages

Infineon

英飞凌

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：549.18 Kbytes 页数：22 Pages

Infineon

英飞凌

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：550.27 Kbytes 页数：22 Pages

Infineon

英飞凌

160 V half bridge SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Integrated shoot-through protection with built-in dead time  Integrated sho

文件：572.95 Kbytes 页数：24 Pages

Infineon

英飞凌