650 V high-side and low-side gate driver with integrated bootstrap diode

Description The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negat

文件：1.67944 Mbytes 页数：24 Pages

Infineon

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650 V half-bridge gate driver with integrated bootstrap diode

Description The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational lo

文件：2.18724 Mbytes 页数：25 Pages

Infineon

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650 V half bridge gate driver with integrated bootstrap diode

Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of -100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 V • Integrated ultra-fast, low

文件：776.08 Kbytes 页数：26 Pages

Infineon

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650 V half bridge gate driver with integrated bootstrap diode

Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of -100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 V • Integrated ultra-fast, low

文件：776.08 Kbytes 页数：26 Pages

Infineon

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丝印：2ED2410-EM；Package：PG-TSDSO-24；12 V/24 V smart analog high-side MOSFET gate driver

Features • PRO-SIL™ ISO 26262-ready for supporting the integrator in evaluation of hardware element according to ISO 26262:2018 Clause 8-13 • One channel device with two high-side gate driver outputs • 3 Ω pull-down, 50 Ω pull-up for fast switch on/off • Support back-to-back MOSFET topologies

文件：5.92652 Mbytes 页数：49 Pages

Infineon

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Single-channel low-side gate driver IC

Features  CMOS Schmitt-triggered inputs  Under voltage lockout  Single pin for fault output and enable  Programmable fault clear time  3.3 V, 5 V and 15 V input logic compatible  25 V VCC voltage supply support (max)  Output in phase with input  -10 Vdc negative input capability of

文件：1.0648 Mbytes 页数：18 Pages

Infineon

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E v a l u a t i o n D r i v e r B o a r d f o r 1 2 0 0 V PrimePACK™

1 Introduction The 2ED250E12-F evaluation driver board shown in Fig. 1 was developed to support customers during their first design steps with the 1200V PrimePACK™ IGBT module. The evaluation driver board is a fully functional IGBT module driver where two 1ED020I12-F driver IC process control a

文件：1.06934 Mbytes 页数：30 Pages

Infineon

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160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：549.18 Kbytes 页数：22 Pages

Infineon

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160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：550.22 Kbytes 页数：22 Pages

Infineon

英飞凌

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：550.27 Kbytes 页数：22 Pages

Infineon

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