LN2322EDT2AG资料使用说明书供应代理第4页-114ic电子网

首页 >2ED>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2ED2108S06F	文件：1.54825 Mbytes Page：26 Pages	650 V half bridge gate driver with integrated bootstrap diode Description The 2ED21091S06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative vol 文件：1.54825 Mbytes 页数：26 Pages	Infineon 英飞凌	Infineon
2ED2108S06F	文件：1.70988 Mbytes Page：25 Pages	650 V half bridge gate driver with integrated bootstrap diode Description The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at nega 文件：1.70988 Mbytes 页数：25 Pages	Infineon 英飞凌	Infineon
2ED2108S06F	文件：1.67112 Mbytes Page：26 Pages	650 V half bridge gate driver with integrated bootstrap diode Description The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at nega 文件：1.67112 Mbytes 页数：26 Pages	Infineon 英飞凌	Infineon
2ED2108S06F	文件：1.61501 Mbytes Page：24 Pages	650 V high-side and low-side gate driver with integrated bootstrap diode Description The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negat 文件：1.61501 Mbytes 页数：24 Pages	Infineon 英飞凌	Infineon
2ED21091S06F	文件：1.67112 Mbytes Page：26 Pages	650 V half bridge gate driver with integrated bootstrap diode Description The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at nega 文件：1.67112 Mbytes 页数：26 Pages	Infineon 英飞凌	Infineon
2ED21091S06F	文件：1.54825 Mbytes Page：26 Pages	650 V half bridge gate driver with integrated bootstrap diode Description The 2ED21091S06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative vol 文件：1.54825 Mbytes 页数：26 Pages	Infineon 英飞凌	Infineon
2ED21091S06F	文件：1.70988 Mbytes Page：25 Pages	650 V half bridge gate driver with integrated bootstrap diode Description The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at nega 文件：1.70988 Mbytes 页数：25 Pages	Infineon 英飞凌	Infineon
2ED21091S06F	文件：1.61501 Mbytes Page：24 Pages	650 V high-side and low-side gate driver with integrated bootstrap diode Description The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negat 文件：1.61501 Mbytes 页数：24 Pages	Infineon 英飞凌	Infineon
2ED21094S06J	文件：1.61501 Mbytes Page：24 Pages	650 V high-side and low-side gate driver with integrated bootstrap diode Description The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negat 文件：1.61501 Mbytes 页数：24 Pages	Infineon 英飞凌	Infineon
2ED21094S06J	文件：1.67112 Mbytes Page：26 Pages	650 V half bridge gate driver with integrated bootstrap diode Description The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at nega 文件：1.67112 Mbytes 页数：26 Pages	Infineon 英飞凌	Infineon

<<<1 2 345 6 7 8 9 >>>

技术参数

VDSS (V)：
20
VGS(V)：
12
ID (A) @TA：
8
VGSth Min (V)：
0.4
VGSth Max (V)：
1
td(on) (ns)：
250
td(off) (ns)：
3950
RDS（ON）Max @VGS/IDS (mΩ)：
22
VGS/IDS (V)/(A)：
4.5/4
Package：
DFN2020-6S
Polarity：
N-Channel(with ESD)

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	LN2322EDT2AG	TI/德州仪器	25+	DFN2x2	20300	TI/德州仪器原装特价LN2322EDT2AG即刻询购立享优惠#长期有货	询价
北京天阳诚业科贸有限公司	LN2322EDT2AG	LRC	24+	con	35960	查现货到京北通宇商城	询价
深圳市三芯电子有限公司	LN2322EDT2AG	LRC乐山无线电	25		10000	全新原装	询价
深圳市创新迹电子有限公司	LN2322EDT2AG	LRC/乐山	22+	DFN2020-6S	20000	只做原装	询价
贸泽芯城（深圳）电子科技有限公司	LN2322ELT1G	LRC/乐山	23+	SOT-23	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市宇创芯科技有限公司	LN2322LT1G	ON/安森美	24+	SOT-23	9600	原装现货,优势供应,支持实单!	询价
深圳市勤尚伟业电子有限公司	LN2322LT1G	LRC			54000	原装正品老板王磊+13925678267	询价
深圳市润联芯城科技有限公司	LN2322LT1G	ON/安森美	23+	SOT-23	50000	原装正品支持实单	询价
深圳市拓亿芯电子有限公司	LN2322MR-G	LN	25+	SOT23-3	15000	全新原装现货,价格优势	询价
深圳市威雅利发展有限公司	LN2322MR-G	LN	1708+	SOT23	3000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

更多2ED供应商更新时间2025-12-25 17:08:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号