160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：550.22 Kbytes 页数：22 Pages

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160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：549.18 Kbytes 页数：22 Pages

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英飞凌

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：550.27 Kbytes 页数：22 Pages

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160 V half bridge SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Integrated shoot-through protection with built-in dead time  Integrated sho

文件：572.95 Kbytes 页数：24 Pages

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英飞凌

160 V half bridge SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Integrated shoot-through protection with built-in dead time  Integrated sho

文件：579.31 Kbytes 页数：23 Pages

INFINEON

英飞凌

160 V half bridge SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Integrated shoot-through protection with built-in dead time  Integrated sho

文件：579.34 Kbytes 页数：23 Pages

INFINEON

英飞凌

160 V half bridge SOI gate driver with integrated bootstrap diode

Features • Bootstrap voltage (VB node) of +160 V • Floating channel designed for bootstrap operation • Integrated low RON, ultra-fast bootstrap diodes • Independent under voltage lockout for both high and low side • Integrated shoot-through protection with built-in dead time • Integrated sho

文件：561.7 Kbytes 页数：24 Pages

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英飞凌

160 V half bridge SOI gate driver with integrated bootstrap diode

Features • Bootstrap voltage (VB node) of +160 V • Floating channel designed for bootstrap operation • Integrated low RON, ultra-fast bootstrap diodes • Independent under voltage lockout for both high and low side • Integrated shoot-through protection with built-in dead time • Integrated sho

文件：560.9 Kbytes 页数：23 Pages

INFINEON

英飞凌

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

文件：550.22 Kbytes 页数：22 Pages

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带有集成自举二极管的 160 V 高压侧、低压侧 SOI 栅极驱动器

MOTIX ™ 160 V 高压侧、低压侧，具有典型的 2 A 拉电流和 4 A 灌电流，采用小尺寸 VSON10、3x3 mm 封装，适用于 N 通道。集成自举二极管用于为外部高端自举电容器供电。保护功能包括 Vcc 和 VB 引脚上的欠压锁定。2ED2734根据JEDEC78/20/22的相关测试，完全符合工业应用的要求。 • 自举电压 (VB) 为 +160 V\n• 集成自举二极管\n• 短脉冲/噪声输入滤波器\n• 3.3V、5 V 输入逻辑兼容\n• 2.5 kV HBM ESD，符合 RoHS 规范;

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