丝印：252；Package：SOT-23；Silicon temperature sensors

General description The temperature sensors in the KTY82 series have a positive temperature coefficient of resistance and are suitable for use in measurement and control systems. The sensors are encapsulated in the small plastic Surface Mounted Device (SMD) SOT23 package. Other special selec

文件：79.72 Kbytes 页数：17 Pages

恩XP

丝印：252；Package：SOT-23；Silicon temperature sensors

General description The temperature sensors in the KTY82 series have a positive temperature coefficient of resistance and are suitable for use in measurement and control systems. The sensors are encapsulated in the small plastic Surface Mounted Device (SMD) SOT23 package. Other special selec

文件：79.72 Kbytes 页数：17 Pages

恩XP

丝印：252；Package：TSOP-6；PWM Controller, Current Mode, for Offline Power Supplies

The NCP1250 is a highly integrated PWM controller capable of delivering a rugged and high performance offline power supply in a tiny TSOP−6 or PDIP−8 package. With a supply range up to 28 V, the controller hosts a jittered 65 kHz or 100 kHz switching circuitry operated in peak current mode con

文件：433.17 Kbytes 页数：25 Pages

ONSEMI

安森美半导体

丝印：252N10NS；Package：TDSON-8；OptiMOS?? Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance RDS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qu

文件：419.52 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：25202；Package：DSBGA；CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

文件：471.48 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25202；Package：DSBGA；CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

文件：471.48 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25211；Package：DSBGA；CSD25211W1015, P-Channel NexFET™ Power MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • Small footprint 1.0 mm × 1.5 mm • Low profile 0.62 mm height • Pb Free • Gate-source voltage clamp • Gate ESD protection – 3 kV • RoHS compliant • Halogen free 2 Applications • Battery Management • Load Switch • Battery P

文件：956.23 Kbytes 页数：14 Pages

TI

德州仪器

丝印：25211；Package：DSBGA；CSD25211W1015, P-Channel NexFET™ Power MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • Small footprint 1.0 mm × 1.5 mm • Low profile 0.62 mm height • Pb Free • Gate-source voltage clamp • Gate ESD protection – 3 kV • RoHS compliant • Halogen free 2 Applications • Battery Management • Load Switch • Battery P

文件：956.23 Kbytes 页数：14 Pages

TI

德州仪器

丝印：252P；Package：SOT23-6；150V N-Channel Enhancement Mode MOSFET

Features BVDSS 150V ID@VGS 10V, TA=25°C 1.5A RDS(ON) typ. @VGS-10V, ID-1.5A 240m Ω

文件：4.03166 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：252P；Package：SOT23-6；150V N-Channel Enhancement Mode MOSFET

Application © Notebook © Load Switch © Networking © Hand-held Instruments

文件：2.35267 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子