丝印：231*；Package：SOT-23；1-, 2- and 4-Channel Low Capacitance ESD Protection Arrays

Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.These devices are ideal for protecting systems with high data and clock rates or for circuits requiring l

文件：418.43 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：2316M；Package：MSOP；Single Digitally Controlled Potentiometer (XDCP™) Low Noise, Low Power I2C Bus, 128 Taps

Features • Specifications per DSCC VID V62/08603-01XB • Full Mil-Temp Electrical Performance from -55°C to +125°C • Controlled Baseline with One Wafer Fabrication Site and One Assembly/Test Site • Full Homogeneous Lot Processing in Wafer Fab • No Combination of Wafer Fabrication Lots in Asse

文件：206.11 Kbytes 页数：3 Pages

RENESAS

瑞萨

丝印：2312X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2312X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. General Features ● VDS = 20V,ID = 6A RDS(ON)

文件：323.88 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：2310；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =3A RDS(ON)

文件：305.66 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：2316；Package：SOT23；N-Channel Enhancement Mosfet

Feature 30V,4A Rds (on)

文件：1.19402 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：2319；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -12V,ID = -6A RDS(ON)

文件：504.65 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：2317SD；Package：SOP-8；P-Channel Power MOSFET

General Features Vds =-20V,Ip =-8A Rds(on)

文件：805 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：2311；Package：HVSSOP；TPS923650/1 65V 1A/2A Boost/Buck-Boost LED Driver with PWM/Analog Dimming

1 Features • 4.5V to 65V wide input range • LED common cathode connection • Integrated 300mΩ MOSFET: – Typical current limit (1.6A / 3.2A) – Switching frequency (400kHz / 1MHz) • Advanced dimming options: – Analog dimming (200:1) – Fast PWM dimming (50ns pulse width) • Full protection fea

文件：2.57338 Mbytes 页数：44 Pages

TI

德州仪器

丝印：2311；Package：WSON；TPS923650/1 65V 1A/2A Boost/Buck-Boost LED Driver with PWM/Analog Dimming

1 Features • 4.5V to 65V wide input range • LED common cathode connection • Integrated 300mΩ MOSFET: – Typical current limit (1.6A / 3.2A) – Switching frequency (400kHz / 1MHz) • Advanced dimming options: – Analog dimming (200:1) – Fast PWM dimming (50ns pulse width) • Full protection fea

文件：2.57338 Mbytes 页数：44 Pages

TI

德州仪器

丝印：2312；Package：HVSSOP；TPS923650/1 65V 1A/2A Boost/Buck-Boost LED Driver with PWM/Analog Dimming

1 Features • 4.5V to 65V wide input range • LED common cathode connection • Integrated 300mΩ MOSFET: – Typical current limit (1.6A / 3.2A) – Switching frequency (400kHz / 1MHz) • Advanced dimming options: – Analog dimming (200:1) – Fast PWM dimming (50ns pulse width) • Full protection fea

文件：2.57338 Mbytes 页数：44 Pages

TI

德州仪器