丝印：2310；Package：SOT-23；MOSFET

Features - Improved dv/dt capability. - Fast switching. - RDS(ON)≤100mΩ@VGS=10V. - AEC-Q101 Qualified.

文件：498.29 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

文件：754.42 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

文件：686.53 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：2310；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =3A RDS(ON)

文件：305.66 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：2310；Package：SOT-23-3；N-Channel Enhancement MOSFET

文件：108.62 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：2310；Package：SOT-23；N-Channel Enhancement MOSFET

文件：208.35 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：2310；Package：SOT-23；60V N-CHANNEL Enhancement Mode MOSFET

文件：512.299 Kbytes 页数：6 Pages

CYSTEKEC

全宇昕科技

丝印：2310BT；Package：TO-247AB；PNP Power Transistors

文件：1.04777 Mbytes 页数：7 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

丝印：2310B；Package：SOP-8；N-Ch Enhancement Mode Power MOSFET

文件：352.68 Kbytes 页数：4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

Bobbin Wound Surface Mount Inductors

DESCRIPTION The 2300 series is a range of bobbin wound surface mount inductors designed for use in switching power supply and power line filter circuits. The parts are suitable for any application requiring a high saturation current in a miniature surface mount footprint. Where EMI is a critical

文件：51.65 Kbytes 页数：2 Pages

CANDD