丝印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

文件：754.42 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

场效应晶体管

CBI

创基电子

丝印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

文件：686.53 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

1ch 4 A High Speed Low-side Gate Driver

General Description BD2310G is 1ch Low-side Gate Driver, which can drive external Nch-FET and IGBT at high speed. BD2310G can supply output current 4 A at small package SSOP5. This driver has the VREF pin for external input logic supply voltage and this range is 2.0 V to 5.5 V. As a protect

文件：1.25969 Mbytes 页数：18 Pages

ROHM

罗姆

1ch 4 A High Speed Low-side Gate Driver

General Description BD2310G is 1ch Low-side Gate Driver, which can drive external Nch-FET and IGBT at high speed. BD2310G can supply output current 4 A at small package SSOP5. This driver has the VREF pin for external input logic supply voltage and this range is 2.0 V to 5.5 V. As a protect

文件：1.25969 Mbytes 页数：18 Pages

ROHM

罗姆

Standard Surface Mount Package

文件：157.67 Kbytes 页数：6 Pages

Vectron