ACMSN2312T-HF

Marking：2312；Package：SOT-23；MOSFET

Features -Electrostaticsensitivedevices. -AEC-Q101Qualified. -Advancedtrenchprocesstechnology. -Loweron-resistance. -Reliableandrugged.

TPS923651D2DGNR

Marking：2312；Package：HVSSOP；TPS923650/1 65V 1A/2A Boost/Buck-Boost LED Driver with PWM/Analog Dimming

1Features •4.5Vto65Vwideinputrange •LEDcommoncathodeconnection •Integrated300mΩMOSFET: –Typicalcurrentlimit(1.6A/3.2A) –Switchingfrequency(400kHz/1MHz) •Advanceddimmingoptions: –Analogdimming(200:1) –FastPWMdimming(50nspulsewidth) •Fullprotectionfea

TPS923651D2DSGR

Marking：2312；Package：WSON；TPS923650/1 65V 1A/2A Boost/Buck-Boost LED Driver with PWM/Analog Dimming

1Features •4.5Vto65Vwideinputrange •LEDcommoncathodeconnection •Integrated300mΩMOSFET: –Typicalcurrentlimit(1.6A/3.2A) –Switchingfrequency(400kHz/1MHz) •Advanceddimmingoptions: –Analogdimming(200:1) –FastPWMdimming(50nspulsewidth) •Fullprotectionfea

FTK2312

Marking：2312；Package：SOT-23；low gate charge and operation with gate voltages as low as 2.5V

RM2312

Marking：2312；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

NCE2312X

Marking：2312X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE2312Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas1.8V.Thisdeviceissuitableforuseasa uni-directionalorbi-directionalloadswitch. GeneralFeatures ●VDS=20V,ID=6A RDS(ON)

FTK2312A

Marking：2312A；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET