丝印：2312A；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

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FS

MOS FET:Low Voltage

First Silicon

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

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Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch–mode applications such as switching regulators, inverter

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NTE

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of

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RFMD

威讯联合