丝印：2312A；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：360.8 Kbytes 页数：6 Pages

FS

MOS FET:Low Voltage

First Silicon

Break-Away Bumpers

文件：132.1 Kbytes 页数：1 Pages

Heyco

Break-Away Bumpers

文件：132.09 Kbytes 页数：1 Pages

Heyco

N-Channel Enhancement Mode Power MOSFET

Description The G2312 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体