ISL88002IE31Z-T

Marking：231；Package：3LdSC-70；Ultra Low Power 3 Ld Voltage Supervisors in SC-70 and SOT-23 Packages

TheISL88001,ISL88002,ISL88003supervisorsareextremelylowpower160nAvoltagesupervisorsthathelptomonitorthepowersupplyvoltagesinawidevarietyofapplications.ByprovidingPower-OnResetandsupplyvoltagesupervisioninsmall3LdSC-70andSOT-23packages,theISL88001,ISL8800

NJW4104U2-33A

Marking：231；Package：SOT-89-5-2；45V Io=200mA Ultra low Quiescent current LDO

■FEATURES ●LowQuiescentCurrent5.5μAtyp.(Aversion) 5.0μAtyp.(Bversion) ●OperatingVoltage4.0Vto40V ●OperatingTemperatureTa=-40Cto125°C ●OutputVoltageAccuracyVO1.0(Ta=25C) VO2.0(Ta=-40Cto125°C) ●OutputCurrentIO(min.)=200mA ●ON/OFFControlAver.only ●Corres

TPCM1213A-01SO

Marking：231；Package：SOT23；1 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

Features Transientprotectionforhighspeeddatalinesto IEC61000-4-2(ESD)+15kV(air),+8kV(contact) IEC61000-4-4(EFT)40A(5/50ns)

ACMS03N06T-HF

Marking：2310；Package：SOT-23；MOSFET

Features -Improveddv/dtcapability. -Fastswitching. -RDS(ON)≤100mΩ@VGS=10V. -AEC-Q101Qualified.

ACMSN2312T-HF

Marking：2312；Package：SOT-23；MOSFET

Features -Electrostaticsensitivedevices. -AEC-Q101Qualified. -Advancedtrenchprocesstechnology. -Loweron-resistance. -Reliableandrugged.

BC2310

Marking：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION TheBC2310usesadvancedtrenchtechnologytoprovideexcellentR. lowgatechargeandoperationwithgatevoltageaslowas2.5V. Thisdeviceissuitableforuseasabatteryprotectionorinotherswitchingapplication. DS(ON) FEATURE Highpowerandcurrenthandingcapabi

BC2310-CAR

Marking：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION TheBC2310usesadvancedtrenchtechnologytoprovideexcellentR. lowgatechargeandoperationwithgatevoltageaslowas2.5V. Thisdeviceissuitableforuseasabatteryprotectionorinotherswitchingapplication. DS(ON) FEATURE Highpowerandcurrenthandingcapabi

CM1213A-01SO

Marking：231*；Package：SOT-23；1-, 2- and 4-Channel Low Capacitance ESD Protection Arrays

ProductDescription TheCM1213AfamilyofdiodearrayshasbeendesignedtoprovideESDprotectionforelectronic componentsorsub-systemsrequiringminimalcapacitiveloading.Thesedevicesareidealforprotectingsystemswithhighdataandclockratesorforcircuitsrequiringl

ISL22316WMUEP

Marking：2316M；Package：MSOP；Single Digitally Controlled Potentiometer (XDCP™) Low Noise, Low Power I2C Bus, 128 Taps

Features •SpecificationsperDSCCVIDV62/08603-01XB •FullMil-TempElectricalPerformancefrom-55°Cto+125°C •ControlledBaselinewithOneWaferFabricationSiteand OneAssembly/TestSite •FullHomogeneousLotProcessinginWaferFab •NoCombinationofWaferFabricationLotsinAsse

NCE2312X

Marking：2312X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE2312Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas1.8V.Thisdeviceissuitableforuseasa uni-directionalorbi-directionalloadswitch. GeneralFeatures ●VDS=20V,ID=6A RDS(ON)