丝印：231；Package：3LdSC-70；Ultra Low Power 3 Ld Voltage Supervisors in SC-70 and SOT-23 Packages

The ISL88001, ISL88002, ISL88003 supervisors are extremely low power 160nA voltage supervisors that help to monitor the power supply voltages in a wide variety of applications. By providing Power-On Reset and supply voltage supervision in small 3 Ld SC-70 and SOT-23 packages, the ISL88001, ISL8800

文件：547.01 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：231；Package：SOT-89-5-2；45V Io=200mA Ultra low Quiescent current LDO

■FEATURES ● Low Quiescent Current 5.5μA typ.(A version) 5.0μA typ.(B version) ● Operating Voltage 4.0V to 40V ● Operating Temperature Ta=-40 C to 125°C ● Output Voltage Accuracy VO 1.0(Ta=25 C) VO 2.0(Ta=-40 C to 125°C) ● Output Current IO(min.)=200mA ● ON/OFF Control A ver. only ● Corres

文件：786.88 Kbytes 页数：21 Pages

NJRCNew Japan Radio

新日本无线株式会社

丝印：231；Package：SOT23；1 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

Features Transient protection for high speed data lines to IEC 61000-4-2 (ESD) +15kV (air), +8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns)

文件：1.0107 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：2310；Package：SOT-23；MOSFET

Features - Improved dv/dt capability. - Fast switching. - RDS(ON)≤100mΩ@VGS=10V. - AEC-Q101 Qualified.

文件：498.29 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：2312；Package：SOT-23；MOSFET

Features - Electrostatic sensitive devices. - AEC-Q101 Qualified. - Advanced trench process technology. - Lower on-resistance. - Reliable and rugged.

文件：480.65 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

文件：754.42 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

文件：686.53 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：231*；Package：SOT-23；1-, 2- and 4-Channel Low Capacitance ESD Protection Arrays

Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.These devices are ideal for protecting systems with high data and clock rates or for circuits requiring l

文件：418.43 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：2316M；Package：MSOP；Single Digitally Controlled Potentiometer (XDCP™) Low Noise, Low Power I2C Bus, 128 Taps

Features • Specifications per DSCC VID V62/08603-01XB • Full Mil-Temp Electrical Performance from -55°C to +125°C • Controlled Baseline with One Wafer Fabrication Site and One Assembly/Test Site • Full Homogeneous Lot Processing in Wafer Fab • No Combination of Wafer Fabrication Lots in Asse

文件：206.11 Kbytes 页数：3 Pages

RENESAS

瑞萨

丝印：2312X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2312X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. General Features ● VDS = 20V,ID = 6A RDS(ON)

文件：323.88 Kbytes 页数：7 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司