UPG2315T5T-E2

Marking：2315；Package：QFN；GaAs HBT INTEGRATED CIRCUIT

FEATURES •Operationfrequency:fopt=2400to2500MHz(2450MHzTYP.) •Supplyvoltage:VCC1,2=3.0to3.6V(3.3VTYP.) •Controlvoltage:Venable=0to2.95V(2.85VTYP.) •Circuitcurrent:ICC=130mATYP.@VCC1,2=3.3V,Venable=2.85V, Pout=+18dBm(atOFDMmodulat

UPG2315T5T-E2-A

Marking：2315；Package：QFN；GaAs HBT INTEGRATED CIRCUIT

FEATURES •Operationfrequency:fopt=2400to2500MHz(2450MHzTYP.) •Supplyvoltage:VCC1,2=3.0to3.6V(3.3VTYP.) •Controlvoltage:Venable=0to2.95V(2.85VTYP.) •Circuitcurrent:ICC=130mATYP.@VCC1,2=3.3V,Venable=2.85V, Pout=+18dBm(atOFDMmodulat

UPG2317T5J-E2

Marking：2317；Package：TQFN；GaAs HBT INTEGRATED CIRCUIT

FEATURES •Operatingfrequency:fopt=2400to2500MHz(L-band) :fopt=4900to5850MHz(H-band) •Supplyvoltage:VCC(H),(L)=3.0to3.6V(3.3VTYP.) •Controlvoltage:Venable(H),(L)=0to2.9V(2.8VTYP.) •Circuitcurrent:ICC(L)=125mATYP.@Pout=+18dBm,11gO

UPG2317T5J-E2-A

Marking：2317；Package：TQFN；GaAs HBT INTEGRATED CIRCUIT

FEATURES •Operatingfrequency:fopt=2400to2500MHz(L-band) :fopt=4900to5850MHz(H-band) •Supplyvoltage:VCC(H),(L)=3.0to3.6V(3.3VTYP.) •Controlvoltage:Venable(H),(L)=0to2.9V(2.8VTYP.) •Circuitcurrent:ICC(L)=125mATYP.@Pout=+18dBm,11gO

2SA2310

Marking：2310BT；Package：TO-247AB；PNP Power Transistors

2SK3012DSE-3

Marking：2310；Package：SOT-23-3；N-Channel Enhancement MOSFET

EC732315

Marking：2315；Package：SOT-23；P-Channel MOS

FTK2312

Marking：2312；Package：SOT-23；low gate charge and operation with gate voltages as low as 2.5V

FTK2312A

Marking：2312A；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

HM2319A

Marking：2319A；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET