N-CHANNEL POWER MOSFET

文件：246.84 Kbytes 页数：5 Pages

UTC

友顺

22A, 650V N-CHANNEL POWER MOSFET

文件：191.64 Kbytes 页数：5 Pages

UTC

友顺

Precious metal commutation

文件：218.48 Kbytes 页数：1 Pages

MCLENNAN

3-phase bridge rectifier braking chopper 3-phase bridge inverter

文件：246.83 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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3-phase bridge rectifier brake chopper 3-phase bridge inverter

文件：957.91 Kbytes 页数：4 Pages

Semikron

赛米控丹佛斯

Precious metal commutation

文件：700.01 Kbytes 页数：1 Pages

MCLENNAN

丝印：22N03S；Package：TDSON-8；OptiMOS?? Power-Transistor

Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance

文件：383.79 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：22N60M6；Package：D2PAK；N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a D2PAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

文件：631.75 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：22NM60ND；Package：TO-220FP；Automotive-grade N-channel 600 V, 0.17 ??typ., 17 A FDmesh??II Power MOSFET in a TO-220FP package

Description This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converter

文件：790.51 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：22N95K5；Package：TO-247；Automotive-grade N-channel 950 V

Description This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low

文件：884.15 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体