丝印：22N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.58 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：22N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.48 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：22N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：489.54 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

HEXFET POWER MOSFET

DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge

文件：241.12 Kbytes 页数：6 Pages

UTC

友顺

HEXFET POWER MOSFET

DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge

文件：241.12 Kbytes 页数：6 Pages

UTC

友顺

HEXFET POWER MOSFET

DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge

文件：241.12 Kbytes 页数：6 Pages

UTC

友顺

Converter-Inverter-Brake (CIB)

Features* • Trench 4 IGBTs • Robust and soft switching freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognized: File no. E63532

文件：1.035119 Mbytes 页数：8 Pages

Semikron

赛米控丹佛斯

HIGH POWER INDUSTRIAL TRANSISTORS

High-Voltage Silicon N-P-N Transistors High-Power Devices for Applicatons in Industrial and Commercial Equipment

文件：188.53 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH POWER INDUSTRIAL TRANSISTORS

High-Voltage Silicon N-P-N Transistors High-Power Devices for Applicatons in Industrial and Commercial Equipment

文件：188.53 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel 60 V (D-S) MOSFET

文件：960.33 Kbytes 页数：7 Pages

VBSEMI

微碧半导体