HEXFET POWER MOSFET

DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge

文件：241.12 Kbytes 页数：6 Pages

UTC

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22A, 600V N-CHANNEL POWER MOSFET

文件：211.84 Kbytes 页数：6 Pages

UTC

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HEXFET POWER MOSFET

DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge

文件：241.12 Kbytes 页数：6 Pages

UTC

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HEXFET POWER MOSFET

DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge

文件：241.12 Kbytes 页数：6 Pages

UTC

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22A, 600V N-CHANNEL POWER MOSFET

文件：211.84 Kbytes 页数：6 Pages

UTC

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N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件：239.68 Kbytes 页数：6 Pages

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22A, 600V N-CHANNEL POWER MOSFET

文件：211.84 Kbytes 页数：6 Pages

UTC

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22A, 600V N-CHANNEL POWER MOSFET

文件：211.84 Kbytes 页数：6 Pages

UTC

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丝印：22N60M6；Package：D2PAK；N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a D2PAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

文件：631.75 Kbytes 页数：16 Pages

STMICROELECTRONICS

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