丝印：22N95K5；Package：TO-247；Automotive-grade N-channel 950 V

Description This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low

文件：884.15 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：22N95K5；Package：HPPAK-2；Automotive N-channel 950 V, 0.280 廓 typ., 17.5 A MDmesh??K5 Power MOSFET in an H짼PAK-2 package

文件：679.86 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体